With the high demand for high bandwidth memory (HBM) outpacing supply, Samsung Electronics has reportedly allocated more than 50% of its 4-nanometer capacity to making the memory chips. The report comes courtesy of ZDNet Korea, and it concerns the base die for the memory chips. As opposed to the HBM DRAM modules, which are fabricated with custom manufacturing nodes, the base die is fabricated using technologies used to build logic chips. Samsung Aiming To Expand HBM4 Memory Chip Production In Q3 2026, Says Report As part of its coverage, ZDNet quotes sources from both within and outside Samsung to comment […]
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