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Intel Leaps 2-4 Years Ahead Of Samsung And TSMC On High-NA EUV Lithography After Producing Its 1 Millionth Test Wafer

A presenter on stage discusses the 'EMIB-T with TSVs' & MIM,' highlighting its suitability for 'HBM4 & UCle 32 Gbps' and its

The fates appear to have turned benevolent towards Intel, especially as its multi-year strategic pivots are now finally on the cusp of paying financial dividends, as evidenced by the chipmaker’s rapidly expanding EMIB-T capacity as well as its hefty lead against Samsung and TSMC on high-NA EUV technology. UBS now believes Intel can easily meet MediaTek’s growing TPU-related demand for EMIB-T advanced packaging, replete with the ability to package over 2 million substrates by 2028 According to UBS, the wider industry is becoming increasingly optimistic on Intel’s EMIB-T, especially in relation to its execution strategy and yields on the advanced […]

Read full article at https://wccftech.com/intel-leaps-2-4-years-ahead-of-samsung-and-tsmc-on-high-na-euv-lithography-after-producing-its-1-millionth-test-wafer/