CXMT Swaps Silicon for Hafnium Inside Its DRAM Transistors, Unlocking A Path To The 1a Node And Beyond, As Its Capacity To Hit 800,000 Wafers Per Month By 2031

CXMT may have just taken its biggest leap towards the 1a DRAM process and beyond by successfully applying an advanced material within DRAM transistors that curbs leakage current, paving the way for its DRAM fabrication process to graduate to the more advanced nodes. CXMT is now using the High-k Metal Gate (HKMG) technology within its DRAM transistors As components shrink to the nanometer scale, standard silicon dioxide (SiO₂) insulation layers typically lose effectiveness, becoming so thin that the current starts leaking straight through them via quantum tunneling. To overcome this process miniaturization constraint, CXMT is now apparently using High-k Metal […]

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