Despite the fact that American export controls continue to restrict China to the older DUV lithography tech, the Asian giant has been using innovative techniques to extract the maximum possible juice from these older machines, and the Chinese Academy of Sciences might just have carved out a viable pathway to 3nm-like performance – albeit constrained by Middle-End-Of-Line (MEOL) realities – by developing new GAA transistors. The Chinese Academy of Sciences (CAS) has developed new gate-all-around (GAA) transistors with on-off ratios above 500,000, unlocking 3nm-equivalent performance The Chinese Academy of Sciences has just revealed a breakthrough transistor architecture that can theoretically […]
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