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Samsung Delays Hybrid Bonding HBM to 2029, Aligning Next-Gen Memory With NVIDIA’s Feynman AI GPUs

An HBM4E core die wafer is displayed next to a sign reading 'HBM4E: Raising Memory Performance.'

Korean chip giant Samsung is likely to start mass producing chips with hybrid bonding by the end of the decade, according to Korean industry sources. Hybrid bonding, which relies on removing the micro bumps in individual DRAM layers when manufacturing high bandwidth memory (HBM), is widely believed to be the next-generation HBM manufacturing technology due to its ability to reduce the space between the layers and offer superior performance. Samsung Likely To Introduce Hybrid Bonding With NVIDIA’s Feynman AI Chips, Believe Sources NVIDIA’s Feynman AI GPUs are slated to follow the Rubin Ultra chips, and NVIDIA shared quite a bit […]

Read full article at https://wccftech.com/samsung-delays-hybrid-bonding-hbm-to-2029-aligning-next-gen-memory-with-nvidias-feynman-ai-gpus/