Samsung Breaks the 10nm DRAM Barrier With New 4F Cell Structure That Boosts Density By Up to 50%

Samsung has reportedly produced the world’s first “standalone” DRAM module that uses a process tech below 10nm. Samsung’s New Sub-10nm DRAM Technology To Boost Densities & Uses New Materials For long, the DRAM industry has relied on a 10nm process technology for producing integrated circuits. 10nm DRAM technologies range from 1x, 1y, 1x, 1a, 1b, 1c, and 1d. Now, Samsung is working on a brand new 10a process technology for DRAM that goes below the official “10nm” process limit. Samsung Electronics has produced the world’s first single-digit nanometer DRAM working die. It is reported that the company plans to rapidly […]

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