Samsung and SK hynix are using two different approaches to manufacture next generation DRAM memory chips, suggest industry insiders. The boom in demand for computing products ushered in by AI data center buildouts has strained the memory market led to a tightness in the markets for HBM, DRAM and other chips since all of these rely on the same raw materials for production. As part of its efforts to manufacture next generation chips, the sources suggest that Samsung is interested in using the gate-all-around FET (GAAFET) fabrication technology for its next generation DRAM chips. Samsung Seeking To Apply NAND Manufacturing […]
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