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Samsung Tackles the Memory & Storage Wall With 400+ Layer “Hybrid Bonded” V10 BV-NAND & zHBM That Stacks HBM Directly On Top of AI Chips

An exhibition booth featuring '3D Architecture Innovations' with displays of HBM3 and NAND-O technologies and a central sign highlighting 'Power Efficiency' and 'Max 8i'.

Samsung has introduced brand new memory and storage technologies at FMS 2026, such as V10 BV-NAND, zHBM, and zNAND-O. Next-Gen AI Accelerators Will Stack Massive Vertical HBM Stacks Directly On Top of Them With Samsung’s zHBM Tech As AI and compute requirements continue to grow, the current swath of technologies is starting to see drawbacks, requiring manufacturers to invest in transformative concepts that are going to play a fundamental role in future AI infrastructure. At FMS 2026, Samsung displayed two brand new technologies that are currently in concept stage, but would become a major deal moving forward if brought to […]

Read full article at https://wccftech.com/samsung-tackles-memory-storage-wall-400-layer-hybrid-bonded-v10-bv-nand-zhbm-znand-o/